首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1947篇
  免费   70篇
  国内免费   144篇
电工技术   30篇
综合类   30篇
化学工业   249篇
金属工艺   232篇
机械仪表   64篇
建筑科学   18篇
矿业工程   5篇
能源动力   92篇
轻工业   38篇
水利工程   6篇
石油天然气   8篇
武器工业   1篇
无线电   258篇
一般工业技术   558篇
冶金工业   101篇
原子能技术   72篇
自动化技术   399篇
  2023年   28篇
  2022年   32篇
  2021年   48篇
  2020年   43篇
  2019年   37篇
  2018年   49篇
  2017年   60篇
  2016年   67篇
  2015年   65篇
  2014年   100篇
  2013年   110篇
  2012年   135篇
  2011年   176篇
  2010年   130篇
  2009年   114篇
  2008年   115篇
  2007年   119篇
  2006年   114篇
  2005年   55篇
  2004年   71篇
  2003年   55篇
  2002年   49篇
  2001年   28篇
  2000年   42篇
  1999年   48篇
  1998年   58篇
  1997年   42篇
  1996年   25篇
  1995年   29篇
  1994年   20篇
  1993年   20篇
  1992年   17篇
  1991年   14篇
  1990年   13篇
  1989年   4篇
  1988年   9篇
  1986年   3篇
  1985年   2篇
  1984年   3篇
  1983年   3篇
  1982年   1篇
  1981年   3篇
  1980年   2篇
  1978年   1篇
  1975年   2篇
排序方式: 共有2161条查询结果,搜索用时 0 毫秒
1.
In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.  相似文献   
2.
R.A. McMahon  M.P. Smith  K.A. Seffen  W. Anwand 《Vacuum》2007,81(10):1301-1305
Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.  相似文献   
3.
由于在大面积玻璃基底上制备由多层材料构成的高质量薄膜晶体管象元驱动阵列工艺的复杂性,使有源矩阵液晶显示器(AMLCD)的成品率低、价格高。利用激光对AMLCD进行非晶硅薄膜的退火和电路缺陷的修复,可有效的改善AMLCD的性能,提高成品率和降低成本。本文在介绍了激光对非晶硅薄膜退火和电路缺陷修复常用激光器的特性后,讨论了激光对不同类型缺陷修复的原理和过程。最后,分析比较了不同类型激光退火方法的特点。  相似文献   
4.
Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.  相似文献   
5.
路径规划是机器人技术中的重要组成部分,分全局路径规划和局部路径规划。本文将栅格法与模拟退火法结合,采用栅格法表示环境信息。局部路径规划主要基于模拟退火法,使路径跳出局部极小点,到达目标位置。  相似文献   
6.
This paper introduces the Force Modulation technique to the study of crystallization process in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films. Using this technique we have successfully visualized ferroelectric crystalline domains and observed that these ferroelectric domains grow out from amorphous phase, unite into strip-like structures, and finally congregate into a union. Force Modulation can weaken the influence of topography on imaging of ferroelectric domains, and reveal more details, which are difficult to be observed in topographical image.  相似文献   
7.
A computer program to calculate the strip temperature heated in the continuous annealing furnace was developed, using the zone method for radiative heat transfer analysis with the measured gas temperature in the furnace. Using theF E Operator, the present study considered the effects of soot and transient species, in addition to the H2O−CO2 gas mixture on the gas radiative heat transfer. The predicted strip temperature distribution forF E=1.05 represented well the measured data. The maximum difference in the heat flux transfered to the strip from the combustion gas forF E=1.0 (without soot and transient species gas radiation) and 1.05 (with soot and transient species gas radiation) was about 15%. The present study also investigated the effects of line speed and thickness variations on the strip temperature, establishing the bases for the on-line computer model.  相似文献   
8.
CdS thin films and bulk precipitates were obtained by chemical bath deposition (CBD) in a well-closed reactor. X-ray diffraction spectroscopy, Fourier transform infrared spectroscopy, thermal analysis, elemental analysis and leaching have been used to characterize solids and thin films. It has been shown that the proportion of cadmium cyanamide in solids may vary from about 50% to 2% according to physicochemical conditions in solution (time after CBD, ammonia concentration) and that CdO results from CdCN2 after air annealing of thin films. This last step also increases the crystallinity of the films.  相似文献   
9.
采用大电流交流脉冲对非晶Fe78B13Si9合金进行了去应力退火。初步探讨了电脉冲加热对加热速率和该合金内应力释放、退火脆化以及最终软磁性影响的基本规律。结果表明:电脉冲加热可以得到远高于常规退火的加热速率,选择合适工艺参数可使非晶合金内应力释放90%,软磁性(H_c和B_s)达常规退火后的95%以上,与此同时使合金的延性(断裂应变ε_f)维持在0.9以上,从而有望实现非晶合金磁性与延性的合理配合。  相似文献   
10.
We introduce a new graph cut for clustering which we call the Information Cut. It is derived using Parzen windowing to estimate an information theoretic distance measure between probability density functions. We propose to optimize the Information Cut using a gradient descent-based approach. Our algorithm has several advantages compared to many other graph-based methods in terms of determining an appropriate affinity measure, computational complexity, memory requirements and coping with different data scales. We show that our method may produce clustering and image segmentation results comparable or better than the state-of-the art graph-based methods.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号